advanced power dual n-channel enhancement electronics corp. mode power mosfet lower on-resistance bv dss 30v simple drive requirement r ds(on) 11m fast switching characteristic i d 10.7a halogen free & rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 continuous drain current 3 , v gs @ 10v a i d @t a =70 continuous drain current 3 , v gs @ 10v a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 10.7 storage temperature range AP4226BGM-HF rating halogen-free product 2 -55 to 150 operating junction temperature range 1 parameter thermal data 201202151 -55 to 150 parameter drain-source voltage total power dissipation pulsed drain current 1 gate-source voltage 30 + 20 8.5 40 s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - 8.1 11 m ? v gs =4.5v, i d =6a - 13 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.35 3 v g fs forward transconductance v ds =10v, i d =10a - 22 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =10a - 14 22 nc q gs gate-source charge v ds =15v - 3.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7.5 - nc t d(on) turn-on delay time v ds =15v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -28- ns t f fall time v gs =10v - 8 - ns c iss input capacitance v gs =0v - 1080 1720 pf c oss output capacitance v ds =15v - 195 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf r g gate resistance f=1.0mhz - 2.2 4.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP4226BGM-HF 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad.
a p4226bgm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 6 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
AP4226BGM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 10 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 400 800 1200 1600 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 135 /w t t 0.02 operation in this area limited by r ds(on) 0 10 20 30 40 50 60 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c 0 2 4 6 8 10 12 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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